BSZ063N04LS6ATMA1 Specifications
Manufacturer: Infineon Technologies
Part Number: BSZ063N04LS6ATMA1
Device Type: N-Channel MOSFET
Drain-Source Voltage: 40 V
Continuous Drain Current: High current capability
On-Resistance: Ultra-low RDS(on)
Gate Drive: Logic-level compatible
Gate Charge: Low gate charge
Package Type: SuperSO6
Mounting Type: Surface mount
Power Dissipation: Optimized thermal performance
Switching Speed: Fast switching characteristics
Operating Temperature Range: -55 °C to +150 °C
Key Features
The BSZ063N04LS6ATMA1 delivers efficient power switching with very low conduction losses. Additionally, the logic-level gate allows direct drive from low-voltage controllers. Moreover, the SuperSO6 package supports improved thermal performance in compact layouts. Furthermore, low gate charge enhances efficiency in high-frequency switching applications.
Applications
DC to DC converters
Synchronous rectification stages
Load switching circuits
Battery powered systems
Industrial motor control
Telecommunications power supplies
Embedded power electronics
High efficiency power stages
Product Overview
The Infineon BSZ063N04LS6ATMA1 N-Channel MOSFET is designed for high-efficiency switching in low-voltage power systems. Specifically, it offers a 40 V drain-source rating combined with ultra-low on-resistance, which helps reduce conduction losses under load. As a result, overall system efficiency improves while thermal stress is minimized. Moreover, the logic-level gate drive simplifies interfacing with modern power management ICs and microcontrollers. Therefore, design complexity is reduced.
In addition, the low gate charge supports fast switching transitions, which improves efficiency in high-frequency converter designs. Furthermore, the SuperSO6 surface mount package enhances heat dissipation compared to smaller outline packages. Consequently, reliability is maintained in demanding operating conditions. Because of its wide operating temperature range, this MOSFET performs consistently across industrial and embedded environments. As a result, long-term system stability is supported.
Overall, this MOSFET combines low losses, fast switching, and robust thermal characteristics. Therefore, it is a practical choice for designers seeking dependable and efficient power switching solutions.
Contact Us
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Email: Sales@Cyndtek.com
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