CY7C1312KV18-250BZXC

CY7C1312KV18-250BZXC Specifications

Manufacturer: Infineon Technologies
Part Number: CY7C1312KV18-250BZXC
Product Type: 18-Mbit QDR® II SRAM with Two-Word Burst Architecture
Memory Size: 18 Mbit
Memory Organization: 1M x 18
Interface: Parallel
Clock Frequency: 250 MHz
Data Rate: 500 MT/s (Double Data Rate)
Supply Voltage: 1.7V to 1.9V
Operating Temperature Range: 0°C to +70°C
Package / Case: 165-FBGA (13×15 mm)
Mounting Type: Surface Mount
RoHS Status: RoHS Compliant

Key Features

The CY7C1312KV18-250BZXC is a high-speed 18-Mbit QDR® II SRAM designed for low-latency and high-bandwidth applications. It features separate read and write data ports, which allow simultaneous operations without requiring bus turnarounds. This design increases efficiency and eliminates delays. The device operates with a 250 MHz clock frequency, supporting data transfer rates of up to 500 million transfers per second.

Each address location consists of two 18-bit words, enabling faster access through its two-word burst architecture. The SRAM also uses dedicated input clocks for both read and write operations, minimizing timing mismatches. Its voltage range of 1.7V to 1.9V and temperature range of 0°C to +70°C ensure stable operation across various environments. The compact 165-FBGA package supports surface mount technology, making it easy to integrate into high-speed electronic systems.

Applications

High-speed networking equipment
Data communication systems
Telecommunications infrastructure
Switches and routers
Test and measurement instruments

Product Overview

The CY7C1312KV18-250BZXC from Infineon Technologies is built for demanding data-processing applications. Its QDR® II architecture enables separate read and write ports, allowing data transactions to happen simultaneously. This increases performance by preventing bus contention and reducing wait times. Additionally, the device’s DDR interface transfers data on both rising and falling clock edges, effectively doubling the data rate.

With a 250 MHz clock frequency, it reaches speeds of up to 500 MT/s, making it ideal for bandwidth-intensive applications. The two-word burst architecture enhances access efficiency, while dedicated input clocks improve signal integrity. Because of its low-voltage operation and industrial temperature range, the SRAM remains reliable even in high-performance environments. Its 165-FBGA package supports space-saving designs, making it easier to implement in compact systems. Compliance with RoHS standards also ensures it meets modern environmental regulations.

Contact Us

For additional information regarding our products, feel free to get in touch with us. You can call us at 770-870-1760 or email us at info@Cyndtek.com. We look forward to assisting you and ensuring your satisfaction with all of our Cyndtek products.