IPZ40N04S5L2R8ATMA1 Specifications
Manufacturer: Infineon Technologies
Part Number: IPZ40N04S5L2R8ATMA1
Device Type: N-Channel MOSFET
Drain-Source Voltage (Vds): 40 V
Continuous Drain Current: High current rating
Rds(on): Ultra-low on-resistance
Gate Charge: Low gate charge for efficient switching
Package Type: SuperSO8
Mounting Type: Surface mount
Threshold Voltage: Standard logic-level gate
Power Dissipation: High thermal performance
Operating Temperature Range: -55 °C to +150 °C
Key Features
The IPZ40N04S5L2R8ATMA1 provides efficient switching performance with ultra-low on-resistance. Additionally, its logic-level gate drive enables compatibility with low-voltage control logic. Moreover, the SuperSO8 surface mount package supports high current handling and thermal dissipation. Furthermore, low gate charge enhances efficiency in fast switching applications.
Applications
DC-DC converters
Load switches in power management
Synchronous rectification stages
Industrial motor drives
Battery-powered systems
Telecommunications power supplies
High-efficiency power stages
Embedded power electronics
Product Overview
The Infineon IPZ40N04S5L2R8ATMA1 N-Channel MOSFET is engineered for high-efficiency power applications requiring low conduction losses. Specifically, it features ultra-low on-resistance that reduces power dissipation during conduction. As a result, energy efficiency improves in both high and low current operating conditions. Moreover, the logic-level gate enables easy interfacing with microcontrollers and control logic at typical drive voltages. Therefore, this MOSFET fits well in modern low-voltage power systems.
In addition, the SuperSO8 surface mount package enhances heat dissipation and supports automated assembly. Furthermore, the device’s low gate charge improves switching performance, which benefits high-frequency power conversion stages. Consequently, designers can achieve faster transitions with lower switching losses. Because of its wide operating temperature range, the IPZ40N04S5L2R8ATMA1 performs reliably across varied environmental conditions. Therefore, long-term durability is maintained in demanding applications.
Overall, this MOSFET combines high efficiency, strong current handling, and robust performance. Therefore, it is a practical choice for designers needing dependable switching devices in power electronics.
Contact Us
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Email: Sales@Cyndtek.com
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