NTF6P02T3G

NTF6P02T3G Specifications

Manufacturer: onsemi
Part Number: NTF6P02T3G
Product Type: P-Channel Power MOSFET
Drain-to-Source Voltage: -20 V
Continuous Drain Current: -10 A
Maximum On-Resistance: 50 mΩ at -4.5 V gate drive
Gate Charge: 20 nC at -4.5 V gate drive
Input Capacitance: 1200 pF at -16 V drain-to-source voltage
Power Dissipation: 8.3 W at 25°C ambient temperature
Package / Case: SOT-223 (TO-261)
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to +150°C
RoHS Status: RoHS Compliant

Key Features

The NTF6P02T3G is a high-efficiency P-Channel MOSFET designed for power switching applications. It provides a low on-resistance of 50 mΩ, reducing conduction losses and improving system efficiency. Its gate charge of 20 nC allows for fast switching, making it ideal for high-speed applications. Additionally, its 1200 pF input capacitance enhances responsiveness in dynamic power environments. The device’s compact SOT-223 package supports surface mount designs, optimizing board space for various applications.

Applications

Power management systems
Load switching
DC-DC converters
Battery protection circuits
Motor control

Product Overview

The NTF6P02T3G from onsemi delivers reliable performance in applications requiring efficient switching with minimal power loss. Its low on-resistance enhances thermal efficiency, while its fast switching capability enables high-frequency operation. Designed for compact circuit layouts, it features a small SOT-223 package, making it suitable for space-constrained applications. The MOSFET operates over a wide temperature range, ensuring stability under varying conditions. Compliance with RoHS standards further ensures it meets environmental and safety requirements.

Contact Us

For additional information regarding our products, feel free to get in touch with us. You can call us at 770-870-1760 or email us at info@Cyndtek.com. We look forward to assisting you and ensuring your satisfaction with all of our Cyndtek products.