PMV20XNER Specifications:
- Drain-Source Voltage (Vds): 30 V
- Continuous Drain Current (Id): 7.2 A
- Drain-Source On-State Resistance (Rds (on)): 19 mΩ typical, max 23 mΩ at Vgs = 4.5 V, Id = 5.7 A,
- Gate-Source Voltage (Vgs): ±12 V
- Gate Threshold Voltage (Vgs (th)): 0.4 V (typical)
- Total Gate Charge (Qg): 12.4 nC
- Input Capacitance (Ciss): 1150 pF
Thermal and Package Information:
- Power Dissipation (Ptot): 1.2 W
- Operating Junction Temperature (Tj): -55°C to +150°C
- Package Type: SOT23 (TO-236AB)
- Mounting Style: Surface-Mounted Device (SMD)
The PMV20XNER, a high-efficiency N-channel MOSFET from Nexperia, is designed to deliver exceptional performance in low-voltage switching applications. Not only does it offer a maximum drain-source voltage of 30V, but it also provides a typical low on-state resistance of just 19mΩ at 4.5V gate drive (max of 23mΩ), thereby ensuring minimal power dissipation and improved efficiency. Moreover, with a continuous drain current rating of 7.2A, this MOSFET is well-suited for applications that require reliable power handling. In addition, its compact SOT23 package makes it ideal for space-constrained designs, facilitating easy integration into modern, high-density circuits. Furthermore, it features a low gate threshold voltage of approximately 0.4V, which allows for seamless operation in logic-level switching applications. Thanks to its fast switching characteristics, the PMV20XNER is particularly advantageous for relay drivers, high-speed line drivers, and low-side load switches, all of which demand both efficiency and reliability. Ultimately, whether used in consumer electronics, industrial control systems, or power management circuits, this MOSFET provides an optimal balance of performance, size, and power efficiency, making it an excellent choice for a wide range of electronic applications.
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