S29GL512S10DHI020

S29GL512S10DHI020 Specifications

Manufacturer: Infineon Technologies
Part Number: S29GL512S10DHI020
Product Type: NOR Flash Memory
Memory Density: 512 Mbit (64 MB)
Interface: Parallel
Supply Voltage: 2.7V to 3.6V
Access Time: 100 ns
Package / Case: 56-TSOP
Mounting Type: Surface Mount
Operating Temperature Range: -40°C to +85°C (Industrial)
Sector Size: 128 KB
Number of Sectors: 1024
Data Retention: 20 Years
Endurance: 100,000 Program/Erase Cycles
RoHS Status: RoHS Compliant

Key Features

The S29GL512S10DHI020 is a 512 Mbit (64 MB) parallel NOR Flash memory device from Infineon Technologies. It operates within a voltage range of 2.7V to 3.6V and offers a 100 ns access time, ensuring swift data retrieval. The memory is organized into 1024 sectors of 128 KB each, providing flexible and efficient data management. With a data retention period of 20 years and an endurance of 100,000 program/erase cycles, it is built for long-term reliability in industrial applications.

Applications

Embedded systems
Industrial automation
Networking equipment
Telecommunications
Automotive electronics
Consumer electronics

Product Overview

The S29GL512S10DHI020 NOR Flash memory is designed to meet the demands of high-reliability applications. Its 512 Mbit capacity and parallel interface make it suitable for systems requiring fast and dependable non-volatile storage. The device’s robust endurance and data retention capabilities ensure consistent performance over extended periods, even in challenging environments. Additionally, its 56-TSOP package facilitates easy integration into various circuit boards, making it a versatile choice for designers seeking durable memory solutions.

Contact Us

For additional information regarding our products, feel free to get in touch with us. You can call us at 770-870-1760 or email us at info@Cyndtek.com. We look forward to assisting you and ensuring your satisfaction with all of our Cyndtek products.