TS3A5018PWR

TS3A5018PWR specifications:

• Low ON-State Resistance: 10 Ω
• Low Charge Injection: 2 pC
• Excellent ON-State Resistance Matching: 300 mΩ
• Low Total Harmonic Distortion (THD): 0.05%
• Single-Supply Operation Voltage Range: 1.65 V to 3.6 V
• Latch-Up Performance: Exceeds 100 mA per JESD 78, Class II
• Switching Times:
  • Turn-On Time (tON): 8 ns (max)
  • Turn-Off Time (tOFF): 6.5 ns (max)
• -3 dB Bandwidth: 300 MHz
• Channel Capacitance:
  • Off State (CS(off)): 4.5 pF
  • Drain (CD(off)): 9 pF
• Leakage Current (IS(off)): 100 nA (max)
• Crosstalk: -48 dB at 10 MHz
• Operating Temperature Range: -40°C to 85°C
• Package: 16-pin TSSOP (PW)

The TS3A5018PWR from Texas Instruments is a quad single-pole double-throw (SPDT) analog switch, which, due to its low ON-state resistance of 10 Ω, ensures minimal signal loss, thereby making it an excellent choice for high-speed signal routing applications. Furthermore, since it operates within a single-supply voltage range of 1.65 V to 3.6 V, it is not only versatile but also compatible with various low-power electronic systems. In addition to that, it boasts an exceptional -3 dB bandwidth of 300 MHz, meaning it can efficiently handle high-frequency signals with minimal distortion. Moreover, its low charge injection of 2 pC significantly reduces signal errors, particularly in precision circuits where accuracy is of utmost importance. As a result, the TS3A5018PWR is highly suitable for sample-and-hold circuits, battery-powered equipment, and audio-video signal routing applications.

Not only does the TS3A5018PWR provide excellent switching performance, but it also features fast turn-on and turn-off times, measuring 8 ns and 6.5 ns respectively, ensuring rapid response times in dynamic applications. Additionally, its low total harmonic distortion (THD) of 0.05% contributes to superior signal integrity, particularly for audio and communication systems. While it already offers impressive ESD protection, exceeding 2000 V for the human-body model, it also surpasses 1000 V for the charged-device model, making it exceptionally robust in real-world environments. Consequently, it ensures long-term reliability, especially in harsh industrial conditions. Beyond that, its latch-up immunity exceeding 100 mA, in accordance with JESD 78, Class II, further enhances its durability.

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